Keywords (5)

3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices

3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS d

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3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices


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Conference: Device Research Conference - DRC , pp. 103-104, 2011

DOI: 10.1109/DRC.2011.5994435

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References (8)

Simulation of electrical characteristic fluctuation in 16-nm FinFETs' and circuits (Citations: 1)

, , ,

Conference: Device Research Conference - DRC , 2009

3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices (Citations: 7)

, , , , , ,

Conference: International Electron Devices Meeting - IEDM , pp. 15.6.1-15.6.4, 2010

Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies (Citations: 11)

, , ,

Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 57, no. 2, pp. 437-447, 2010

Discrete Dopant Fluctuations in 20-nm/15-nm-Gate Planar CMOS (Citations: 14)

, , ,

Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 55, no. 6, pp. 1449-1455, 2008

A physical 3-D analytical model for the threshold voltage considering RDF (Citations: 3)

Conference: Device Research Conference - DRC , 2009


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